Abstract
Microwave photonic technologies have been introduced for achieving broadband radio-frequency signal measurement. However, few of the proposed schemes mention the low-power radio-frequency signal detection, which stringently limits their practical applications in certain areas. In this paper, we designed and demonstrated a wideband low-power radio-frequency signal measurement system with optoelectronic oscillator. Here, the unknown radio-frequency signal matched the potential oscillation mode is allowable to be detected, amplified and estimated. The key component in the tunable optoelectronic oscillator is a silicon nitride micro-disk resonator with a very high Q-factor, which is utilized to achieve frequency selection as a microwave filter. A frequency measurement system range from 1 ∼ 20 GHz with radio frequency power as low as −105 dBm, measurement errors of ±375 MHz and the maximum gain of 61.7 dB were realized experimentally
Highlights
A frequency measurement system range from 1 ∼ 20 GHz with radio frequency power as low as −105 dBm, measurement errors of ±375 MHz and the maximum gain of 61.7 dB were realized experimentally
Frequency measurement has a great significance in the radar monitoring [1], wireless communication [2] and satellite remote sensing [3], in which the extremely low-power radio-frequency (RF) signal measurement is included as an essential survey
At location B, the received low-power signal is sent into the phase modulator (PM) via the RF amplifier and modulated on the optical carrier launched by the tunable laser (TLS), whose frequency is fc
Summary
Frequency measurement has a great significance in the radar monitoring [1], wireless communication [2] and satellite remote sensing [3], in which the extremely low-power radio-frequency (RF) signal measurement is included as an essential survey. In Ref [13], an OEO-based frequency measurement system using the effect of stimulated Brillouin scattering (SBS) was employed, which completed a frequency measurement range from 1 to 17 GHz, measured power sensitivity of −72 dBm and maximum gain of 29 dB. The experiment results show frequency measurement range of 1 ∼ 20 GHz with power as low as −105 dBm, measurement errors of ±375 MHz, and maximum gain of 61.7 dB were realized. This scheme paves the way of monolithic silicon integration for RF signals frequency measurement
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