Abstract
The development and application of a geometrically based uniformity criterion is presented for film uniformity control in a radial-flow epitaxy reactor system. In this multi-wafer reactor system, individual wafers rotate on a rotating susceptor in a planetary motion to reduce the effects of reactant depletion on deposition uniformity. The uniformity criterion developed for this system gives an unambiguous criterion for minimizing non-uniformity of any film property and gives physical insight into the reactor operating conditions that most influence uniformity. The uniformity criterion is used to demonstrate run-to-run uniformity control capabilities on a commercial system for SiC CVD.
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