Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor

Abstract

In this article, we propose an integrate-and-fire (IF) neuron circuit using a single-gated silicon nanowire feedback field-effect transistor that utilizes a positive feedback loop. The IF operations are investigated through mixed-mode technology computer-aided design simulations. The neuron circuit composed of four component transistors (plus one capacitor) exhibits a high firing frequency of ~20 kHz and low power and energy consumption of $7~\mu \text{W}$ and $2.9\times 10^{-15}$ J. The firing frequency and spiking voltage can be controlled through external biasing voltages. Our novel neuron circuit demonstrates a promising potential for use in spiking neural network hardware for very large-scale integration.