Abstract
This paper reports on an experimental investigation of the variation with implant energy E of D c, the dose necessary for direct formation of a stoichiometric buried SiO 2 layer. It is shown that this dependence follows a simple E 0.5 relationship over the energy range of 80 to 200 keV. Good crystal quality of the surface Si layer was maintained during the synthesis at an optimum temperature of 580°C (for the particular implantation conditions used) by means of electrical sample heating. Rutherford backscattering/channeling (RBS) results were compared with computer analysis of the incipient SiO 2 layer.
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