Abstract
A common problem with fabricating n-type layers in semi-insulating GaAs by ion implantation is the variation in the net activation efficiency on the substrate side of the implanted dopant profile. We compare two methods for modifying these doping profile tails in order to achieve uniform activation properties of implanted layers over large wafer areas. The two methods are compensation of an n-type doping profile by a buried damage layer (oxygen or helium implants) or by coimplantation of an acceptor species (beryllium). Experimental results are shown both for n-only and n+-n profile modifications. The use of Be to form a buried p-type layer has several advantages over the damage-induced compensation.
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