Abstract

The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N/sup +/-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N/sup +/-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.

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