Abstract
The effects of ion implantation on the reflectivity spectra of Al0.98Ga0.02As/Al0.7Ga0.3As and Al0.98Ga0.02As/Al0.5Ga0.5As distributed Bragg reflectors (DBRs) are investigated. Three different ions (H+, O+, Si+) are implanted into the DBR for comparison. The reflectivity spectra in the O-implanted and Si-implanted DBRs exhibit large amount of red-shift, but almost the same as unimplanted sample in the H-implanted DBRs is found. The maximum wavelength shift of 20 nm is observed for Si-implanted DBR in our experiment. The peak wavelength shifts toward longer wavelength after ion implantation, which is attributed to the Al–Ga intermixing near interfaces in DBRs. In addition, the wavelength shift of implanted Al0.98Ga0.02As/Al0.5Ga0.5As DBR is more obvious than that of Al0.98Ga0.02As/Al0.7Ga0.3As DBRs. This means the implantation induced intermixing is reduced while decreasing compositional contrast of Al concentration between high- and low-index layers.
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