Abstract
Neutron activation techniques were used to study the efficiency of ion‐implantation gettering of gold in gold‐equilibrated silicon samples. The implantation species was 150 keV argon ions. An ion dose of was found to be optimum. Within the range of ion current density investigated, the gettering efficiency increased with the ion current density. Implantation performed at a high temperature provided less gettering than that performed at a lower temperature. A postannealing temperature of either 900° or 1000°C could be superior to 1100°C in gettering gold, provided enough gettering time was allowed. The optimum conditions for ion‐implantation gettering were applied to a typical MOS processing cycle on as‐recieved silicon samples. For an ion dose of , a total gettering time of 8 hr at 1000°C increased the MOS generation lifetime significantly compared with that for a control sample. The data from the MOS generation lifetime study are consistent with the results of the neutron activation analysis.
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