Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

Abstract

We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn−, n=1–3) ion implantation with the same atomic boron dose and energy. This Bn− series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B1− implantation has less TED and less boron–interstitial clustering than B2− and B3− implantation. A boron trapping peak at the SiO2/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions.