Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As

Abstract

Continued effort has been placed on maximizing activation while controlling the diffusion of silicon doping in InGaAs for present and future complementary metal-oxide semiconductor devices. In order to explore the diffusion and activation behavior, Si marker layers were grown in InGaAs on InP by molecular beam epitaxy. The nature of Si diffusion was explored using a series of isoelectronic implants to introduce excess point defects near the layer. It was observed that excess interstitials reduce the Si diffusion consistent with a vacancy-driven diffusion mechanism. A diffusion and activation model implemented in the Florida object oriented process simulator has been developed to predict silicon diffusion behavior over a variety of temperatures and times. Using current and previous experimental data and complimentary density functional theory results, the diffusion model employs the SiIII–VIII pair as the primary mechanism for silicon diffusion in InGaAs.