Abstract
Both p+ and n+ ultra-shallow junctions (USJ) <10 nm deep have been realized by using <200 eV equivalent boron energy (<890 eV BF2 or <4 keV B18H22) or <1 keV equivalent arsenic energy (<500 eV P or <1.7 keV Sb) implants in combination with diffusion- less high temperature msec annealing and diffusion-less low temperature spike annealing thereby also reducing device micro-variation. Non-contact optical metrology techniques such as therma-probe (TW) and junction photo-voltage (RsL) were used to detect and monitor both implant and annealing equipment micro-uniformity and unique equipment signatures as well as junction quality (dopant activation, residual implant damage and junction leakage current).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.