Abstract
An investigation of imperfections due to selective-area planar double diffusions of n- and p-type impurities on epitaxial silicon has shown that elastic and inelastic lattice strain exists at the edges of oxide windows. This strain may act as nucleation sites for precipitating metallic impurities. High-surface-concentration emitter impurities (phosphorus) cause residual, inelastic strains at oxide edges, while base diffusions (boron) normally cause elastic lattice strains. X-ray transmission topography reveals both elastic and inelastic strains. Surface reflection x-ray topography is slightly more sensitive than x-ray transmission topography for detecting defects due to shallow phosphorus diffusion. Chemical etching techniques delineate line defects which are unresolved by x-ray techniques. The line defects are confined to the emitter area and extend in 〈110〉 and 〈112〉 directions. Differences in the results obtained by both x-ray techniques are discussed in terms of defects observed by etching techniques.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
