Impedance Transparency and Performance Metrics of HBT-Based N-Path Mixers for mmWave Applications

Abstract

MOS N-path mixer-first receivers are capable of providing instantly-reconfigurable RF impedance and bandwidth while achieving moderate noise figure (NF) and high linearity, but their frequency tuning range is limited by both LO (local oscillator) generation and the RF port input capacitance. State-of-the-art mm-wave MOS N-path receivers often compromise performance to cover the mm-wave range, but this paper presents the theory and design considerations for a new topology of N-path mixer which makes use of high f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> HBTs and breaks this trade-off between performance and tuning range. Here, we borrow from a previously derived LTI model for MOS-based N-path mixers to derive an analogous model for the HBT-based counterpart which provides a meaningful comparison between the performance of the two topologies. We show that the HBT-based implementation is capable of operation beyond the frequency limits of MOS-based implementations while maintaining comparable NF and linearity without consuming exorbitant power. Measurements done on a proof-of-concept chip in GlobalFoundries BiCMOS8HP are consistent with our models and simulations. By organizing process parameters and user-selected design variables into dimensionless ratios, we provide expressions for key performance metrics which enable the designer to make informed decisions about trade-offs and optimizations for both LO generation and the mixer core.