Abstract
The passive film forming on Alloy C22 in hydrochloric acid was found to be an n-type semiconductor. Mott-Schottky analysis of the semiconducting properties of the passive film was complicated by regions of positive and negative slope and measured capacitances that were frequency dependent. It was determined that the maxima observed in Mott-Schottky tests were caused by inversion and capacitive frequency dispersion resulted from a combination of electrode microroughness and the disordered/amorphous structure of the passive film.
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