Abstract
A novel material CaCu3Ti4O12 (CCTO), for resistance random access memory (RRAM) application, was prepared by sol-gel method. Our preliminary study indicates CCTO shows the resistive switching behaviors of RRAM. In this work, the resistance switching characteristics of CCTO films are investigated. The dielectric properties of CCTO films were observed by the impedance spectroscopy. On the basis of the results observed by impedance spectroscopy, the conduction mechanisms of the CCTO RRAMs at the original state, ON state, and OFF state are explored.
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