Impedance Spectroscopy of a Molecular Memory Cell with a Redox-Active Component

Abstract

We report the frequency dependent impedance spectroscopy of an Al/Al2O3/ASA-15 monolayer/Ti/Al molecular memory cell. As a result of comparing the memory cell with a control device that does not contain ASA-15 molecules, we confirmed that its impedance properties were originated from the ASA-15 monolayer. By examining the Cole-Cole plot for the fabricated memory cell, we also found that the response of the memory cell can be explained in terms of an equivalent circuit model with a contact resistance R(s) in series with an impedance Z(ox) at the Al oxide layer and an impedance Z(LB) at the ASA-15 monolayer.