Abstract
Arrays of voltammetric electrodes with submicrometer dimensions have been constructed on a silicon substrate using electron beam lithography. The assembly included over 1 million active elements, each 0.375 μm in radius. The integrity of the electrode structure was confirmed by study of the passivation behavior of a chromium array. Analysis of experimental impedance data based on Bode plots emphasizes aspects of the response which are not as readily apparent from the analysis of the total impedance in the complex plane.
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