Abstract
The behavior of an NiSi electrode in 0.5 M H2SO4 in the region of passive and transpassive state (from 0.50 to 2.1 V (versus SHE)) is studied. The conclusion is made about formation of oxide film close to SiO2 by composition on the electrode surface in the passivation process. Equivalent electric circuit modeling passive and transpassive state of nickel silicide is proposed. Thickness of oxide film and its specific resistance depending on electrode potential are calculated basing on the impedance data.
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