Abstract
A closed hydrodynamic (HD) approach is used to carry out a comprehensive spatial analysis of the dynamic features of submicron n+ nn+ InP diode both in time and frequency domains. The contribution of each part of the device, when operating as microwave power generator, is analyzed through the spatial profiles of the impedance-field spectrum. The usual subdivision of the n-region into a passive (dead-zone) and active zone is carried out. The dead zone is found to manifest ittelf as a purely real resistance which is practically independent of the frequency. One or more spatial zones which are responsible for the generation are shown to be formed in the active region of the diode. By reducing the length of the n-region, under the condition that the total current is constant in time, the additivity of the contributions from each part of the device into the generation spectrum is demonstrated.
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