Abstract
Aurivillius SrBi 2(Nb 0.5Ta 0.5) 2O 9 (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. The obtained samples were thermally modified in high vacuum to study the influence of the formed defects on the dielectric and electrical properties of the samples. Scanning electron microscopy with an energy dispersion X-ray spectrometer was applied to investigate the grain structure and stoichiometry of the studied ceramics. Their dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material which was controlled by thermal modification of the tested ceramics. This phenomenon can be ascribed to the presence of ionized space charge carriers such as oxygen and bismuth vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. Moreover the temperature dependence of various electrical properties was determined and discussed.
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