Abstract
The potentialities of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on group III–V semiconductor material Wurtzite-gallium nitride (Wz-GaN) as possible millimetre-wave (mm-wave) and terahertz (THz) sources have been explored in this paper. A large-signal (L-S) simulation technique based on a non-sinusoidal voltage excitation model (NVSE) developed by the authors has been used to study the high-frequency properties of DDR Wz-GaN IMPATTs at both mm-wave and THz frequencies. Similar studies have also been carried out for DDR IMPATTs based on some other conventional semiconductor materials such as GaAs (group III–V), InP (group III–V) and Si (group IV). Results show that DDR Wz-GaN IMPATTs excel all other devices under consideration as regards radio-frequency performance at both mm-wave and THz frequencies.
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