Abstract
Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.
Highlights
AlGaN/GaN high electron mobility transistor (HEMT) is promising for high frequency, high power density, and high temperature applications owing to its superior material properties such as wide bandgap (3.4 eV), high breakdown field (2 × 106 V/cm), high thermal stability, and its 2-D electron gas (2DEG) channel [1, 2]
We develop the thermal atomic layer deposition (ALD) technique and use it as a passivation layer
In order to explain the different behavior of devices using AlN and SiN passivation, nano-beam diffraction (NBD) was applied on the passivated device to detect the strain-caused deformation of AlGaN layer [10]
Summary
AlGaN/GaN high electron mobility transistor (HEMT) is promising for high frequency, high power density, and high temperature applications owing to its superior material properties such as wide bandgap (3.4 eV), high breakdown field (2 × 106 V/cm), high thermal stability, and its 2-D electron gas (2DEG) channel [1, 2]. In order to realize GaN HEMTs on the mainstream 8-in. Wafer, GaN-on-Si HEMTs have been intensively investigated. In the typical structure of GaN-on-Si HEMTs, the crystalline defect density is high because of the lattice mismatch of two material systems. Passivation techniques have been widely applied for filling these traps [5–8]. ALD-grown AlN is a wide band-gap material recently reported as a new choice to passivate AlGaN/GaN HEMTs for its good isolation ability and high quality interface with AlGaN/GaN [3, 9].
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