Abstract
AbstractThe development of perovskite light‐emitting diodes (PeLEDs) with both high efficiency and excellent stability remains challenging. Herein, a strong correlation between the lattice strain in perovskite films and the stability of resulting PeLEDs is revealed. Based on high‐efficiency PeLEDs, the device lifetime is optimized by rationally tailoring the lattice strain in perovskite films. A PeLED with a high peak external quantum efficiency of 18.2% and a long lifetime of 151 h (T70, under a current density of 20 mA cm−2) is realized with a minimized lattice strain in the perovskite film. In addition, an increase in the lattice strain is found during the long‐time device stability test, indicating that the degradation of the local perovskite lattice structure could be one of the degradation mechanisms for long‐term stable PeLEDs.
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