Abstract

We investigate the surface lattice and electronic structure of [110] oriented hydrogen-passivated silicon nanowires (SiNWs) of different cross-sectional shapes by using the first-principles tight-binding method. Remarkable quantum confinement effects are observed on the surface lattice constant and the electron effective mass. Moreover, with the same cross-sectional area, the triangular-SiNW has more obvious size dependence than rectangular-SiNW. The significant size and cross-sectional shape effects are explained by the concept of surface-to-volume ratio. Our results demonstrate that due to the smaller electron effective mass, the rectangular-SiNW has obvious advantage over triangular-SiNW in application in higher on current in SiNW transistor.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.