Impacts of Mode Mixity on Controlled Spalling of (100)-Oriented Germanium

Abstract

Controlled spalling is a technology to prepare single-crystal thin films of semiconductors by fracture with a subsurface crack propagating nearly parallel to the substrate surface. Practical applications require uniform thickness and a smooth surface across the whole film. Both wafer-scale and patterned-stressor-defined small-area spalling of germanium substrates are conducted experimentally and numerically. River line features are observed on spalled surfaces close to lateral edges of the spall, regardless of the spall direction and the size of the spalled area. Three-dimensional finite element method modeling shows the river lines are caused by mixed mode I + III loading near the lateral edges of spall and predicts a spall depth variation near the lateral edges of spall due to mixed mode I + II loading. The absolute range of river lines increases with lateral size of spall, while the relative range of river lines decreases, consistent with variations in mode mixity.