Abstract
In this letter, fluorine ion implantation with low- temperature solid-phase crystallized activation scheme is used to obtain a high-performance HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> low-temperature poly-Si thin- film transistor (LTPS-TFT) for the first time. The secondary ion mass spectrometer (SIMS) analysis shows a different fluorine profile compared to that annealed at high temperature. About one order current reduction of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> is achieved because 25% grain- boundary traps are passivated by fluorine implantation. In addition, the threshold voltage instability of hot carrier stress is also improved with the introduction of fluorine. The LTPS-TFT with HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate dielectric and fluorine preimplantation can simultaneously achieve low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> ~ 1.32 V, excellent subthreshold swing ~0.141 V/dec, and high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> current ratio ~1.98 times 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> .
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