Impacts of Emitter Layer Thickness on the Cutoff Frequency of GeSn/Ge Heterojunction Phototransistors

Harshvardhan Kumar,Rikmantra Basu

doi:10.1007/978-981-15-8366-7_30

Impacts of Emitter Layer Thickness on the Cutoff Frequency of GeSn/Ge Heterojunction Phototransistors

Harshvardhan Kumar, Rikmantra Basu

https://doi.org/10.1007/978-981-15-8366-7_30

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Publication Date: Jan 1, 2021

Citations: 1

Affiliation: National Institute of Technology Delhi

#Heterojunction Phototransistors #Emitter Layer Thickness + Show 8 more

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Abstract

AbstractIn this work, the effect of emitter layer thickness variation on the frequency performance of GeSn heterojunction phototransistors (HPTs) is studied. Various characteristics parameters such as capacitance and transit time with respect to the emitter layer thickness (\({t}_{E}\)) are calculated over the surface of the GeSn/Ge HPT. In addition, we have also calculated the cut-off frequency (\({f}_{T}\)) and maximum frequency (\({f}_{max}\)) with respect to the \({t}_{E}\) of GeSn/Ge HPT. The calculated results show that the proposed device exhibits excellent \({f}_{T}\) > 16 GHz and > \({f}_{max}\)90 GHz for \({t}_{E}=100 \mathrm{nm}\).KeywordsCut-off frequencyGeSn HPTJunction capacitanceTransit time

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