Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex p-Channel Gate-All-Around Nanowire Transistors

Abstract

In this work, the impacts of both nanowire diameter (DNW) and Ge content (%) on the performance of Si1−xGex Gate-all-around nanowire p -channel FETs are investigated. The variations in SiGe Gate-all-around nanowire p -channel FETs induced by DNW variation, Ge content variation, and some stochastic process variations including random dopants fluctuation, gate edge roughness, and metal gate granularity are also evaluated.