Abstract
In this letter, we demonstrated an approach to introduce a positive shift in transfer curves of lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001), without deterioration of channel conductance. With an additional Al<sub>2</sub>O<sub>3</sub> thin film on thermally grown SiO<sub>2</sub> after the nitridation process, a dipole layer was formed at the Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> interface, which induced the positive shift of flat-band voltage. The field-effect mobility of MOSFET was not changed after the Al<sub>2</sub>O<sub>3</sub> fabrication process, which means that the quality of the nitrogen-passivated SiO<sub>2</sub>/SiC interface was not damaged by this process.
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