Impact of Work Function and Silicon Thickness on 3-D Analytical Model of Gate All Around Field Effect Transistor

Abstract

In this work, by using different work functions and silicon thickness to observe the performance of gate-all-around field-effect transistor (GAA-FET) multigate by keeping channel length 30nm. In this paper, the n-type gate-all-around field-effect transistor (n-GAA-FET) was developed by using the parabolic and Poisson equation. Further, by variation of different silicon thickness and taking suitable gate work functions (4.6eV and 4.7eV) observed the performance of the n-GAA-FET device. Further, it is observed best performance of the device by reducing the dimension of silicon thickness (tSi), using appropriate work function on different parameters such as threshold voltage(VTH), ON and OFF current, drain induced barrier lowering (DIBL). The proposed model exhibits increase drain current (10E5)by reducing silicon thickness and improved leakage current(10E11), the optimal threshold voltage of 0.33V, decline drain induced barrier lowering, improved subthreshold slope of 63 mV/decade.