Abstract
A UV detector based on a planar quadrant electrode structure with a 100-μm isolating cross-gap deposited on chemical vapor deposition diamond was fabricated. An asymmetrical behavior was observed for the amplitude of photocurrent when in forward and reverse bias. A linear relationship between the sum of the photocurrents at biases U and −U, and the light spot position was also observed. The aim of this study is to clarify the mechanism underlying this asymmetrical behavior and exhibit its potential application based on this behavior. A mechanism involving lowering of the contact barrier height between gold and i-diamond by carrier generation upon UV illumination was adopted to account for the photocurrent behavior and confirmed when an opposite asymmetrical photocurrent behavior was observed in other samples. In addition, position-sensitive detection performance, based on this asymmetrical photocurrent behavior, was preliminarily studied. The results exhibited the potential for application as a position-sensitive detector.
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