Abstract
Bias temperature instability (BTI) in SiC MOSFETs has come under significant academic and industrial research. Threshold voltage (VTH) shift due to gate voltage stress has been demonstrated in several studies investigating gate oxide reliability in SiC MOSFETs. Results have shown positive.VTH shift occurs due to electron trapping (PBTI), and negative VTH shift occurs due to hole trapping (NBTI). In this paper, VTH shift is studied for unipolar and bipolar gate pulses with frequencies ranging from 1Hz to 100 kHz. The turn-OFF voltage for the unipolar VGS pulse is 0 V. In the case of the bipolar VGS pulses, two turn-OFF voltages are investigated, namely VGS-OFF = -3V and VGS-OFF= -5V. VTH shift is measured after 1000 seconds with recovery times in the range of 20 milliseconds, and preconditioning is performed before VTH measurement. These measurements have been performed at 25°C and 150°C on a commercially available SiC Planar MOSFET and a SiC Trench MOSFET. The results show that -3 V is enough for de-trapping sufficient electrons while -5V results in increased NBTI, which is accelerated by higher temperatures.
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