Abstract
The paper presents the results of laboratory studies on influence of DC transistor operating conditions both on power amplifier (PA) linearity and effectiveness of digital predistortion procedure. The impact of DC operating conditions of 10 W GaN HEMT power amplifier on nonlinearity factors without and with digital predistortion (DPD) were investigated. The obtained results show that there is an additional improvement in adjacent channel leakage ratio (ACLR) of the order of a few dB only by an increase in the quiescent drain current of PA transistor. However, some noticeable improvement of ACLR with significant increase in PA power added efficiency (PAE) is obtained for PA with digital predistortion.
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