Abstract
Copper tin sulfide (Cu2SnS3) thin films have been grown on glasssubstrate with different thicknesses (500, 750 and 1000) nm by flashthermal evaporation method after prepare its alloy from theirelements with high purity. The as-deposited films were annealed at473 K for 1h. Compositional analysis was done using Energydispersive spectroscopy (EDS). The microstructure of CTS powderexamined by SEM and found that the large crystal grains are shownclearly in images. XRD investigation revealed that the alloy waspolycrystalline nature and has cubic structure with preferredorientation along (111) plane, while as deposited films of differentthickness have amorphous structure and converted to polycrystallinewith annealing temperature for high thickness. AFM measurementsshowed that the grain size of the films was increasing by annealing.The ultraviolet- visible absorption spectrum measurement indicatedthat the films have a direct energy band gap. Eg decrease withthickness and increase with annealing.
Highlights
The energy crisis and environment problems becoming more and more serious, it is very urgent to explore new energy resource, Solar energy is a promising new energy resource which is clean and sustainable [1]
The ternary semiconductors Cu2SnX3 (X = S, Se) are found frequently as secondary phases in synthesized Cu2ZnSnS4 and Cu2ZnSnSe4 samples,as candidates for low-cost thinfilm solar-cell absorbers, quaternary semiconductors Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) have been studied intensively in the past five years [5].The research groups have been focusing their attention to this compound to increase the efficiency in the near future, despite the advantages that come from CZTS, it shows a complex structure and requires very controlled growth conditions, If this process starts with metallic precursors, intermediate binary and ternary sulfides are formed, these compounds will remain after the end of the growth process if the composition and the sulfurization conditions are carefully controlled, among these ternary sulfides, Cu2SnS3 is the most relevant compound[6]
This paper reports the impact of thickness and annealing temperatures on the structural, morphological, and optical properties of CTS thin films which deposited by flash thermal evaporation technique
Summary
The energy crisis and environment problems becoming more and more serious, it is very urgent to explore new energy resource, Solar energy is a promising new energy resource which is clean and sustainable [1]. The ternary semiconductors Cu2SnX3 (X = S, Se) are found frequently as secondary phases in synthesized Cu2ZnSnS4 and Cu2ZnSnSe4 samples ,as candidates for low-cost thinfilm solar-cell absorbers, quaternary semiconductors Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) have been studied intensively in the past five years [5].The research groups have been focusing their attention to this compound to increase the efficiency in the near future, despite the advantages that come from CZTS, it shows a complex structure and requires very controlled growth conditions, If this process starts with metallic precursors, intermediate binary and ternary sulfides are formed, these compounds will remain after the end of the growth process if the composition and the sulfurization conditions are carefully controlled, among these ternary sulfides, Cu2SnS3 is the most relevant compound[6]. This paper reports the impact of thickness and annealing temperatures on the structural, morphological, and optical properties of CTS thin films which deposited by flash thermal evaporation technique. UV-visible absorption spectra were obtained using a Shimadzu (UV-1650 PC) spectrophotometer over the wavelength range (300-1100) nm and calculated the optical properties of as deposited and annealed films with different thicknesses (500, 750, and 1000) nm
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