Abstract
The interest in semipolar orientations has been increasing because the reduced piezoelectric field can improve the performance of nitride-based optoelectronic devices. However, the crystalline quality of semipolar AlN on m-plane sapphire is still not good enough to realize light emitters with sufficiently high efficiency. We performed high-temperature annealing on AlN on m-plane sapphire to improve the crystalline quality. For (10-1-3) and (11-22) AlN on m-plane sapphire, the crystalline quality improved as the annealing temperature was increased up to 1700 °C, whereas beyond 1750 °C the AlN layer started to deteriorate and desorb. The crystalline quality was further improved by additional growth of AlN. In addition, X-ray rocking curve measurements and transmission electron microscopy confirmed that the density of stacking faults was reduced after the additional growth of AlN.
Highlights
AlGaN is a promising material for the fabrication of deep ultraviolet (DUV) optical devices such as light-emitting diodes and laser diodes.1–6 These devices are commonly grown on the (0001) c-plane of sapphire, where the spontaneous and piezoelectric polarization produces a strong electric field along the growth direction
The result is in good agreement with the reduced full widths at half maximum (FWHM) in the X-ray rocking curve (XRC) measurements, and supports the implication that the crystalline quality improves with hightemperature annealing (HTA)
We have investigated the effects of HTA on semipolar AlN grown on m-plane sapphire
Summary
AlGaN is a promising material for the fabrication of deep ultraviolet (DUV) optical devices such as light-emitting diodes and laser diodes.1–6 These devices are commonly grown on the (0001) c-plane of sapphire, where the spontaneous and piezoelectric polarization produces a strong electric field along the growth direction. Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire Growth of semipolar nitrides with (11-22) or (10-1-3) orientations on (10-10) m-plane sapphire substrates has been reported.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
