Abstract

AbstractWe extend the McPherson Model for silicon-oxygen bond-breakage derived for a single SiO4 tetrahedron to capture the influence of the whole lattice. Several pair-wise potentials have been compared in the model including Mie-Grüneisen as well as diverse forms of TTAM/BKS. The contribution of the whole lattice substantially increases the activation energy for the Si-O bond rupture. The corresponding small transition rate of a non-distorted Si-O bond suggests that the interaction with the electric field alone can not be responsible for the bond-breakage and the contribution of other components such as energy delivered by particles and/or bond weakening is required.ü

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.