Abstract
We have fabricated from the same epitaxial wafer series of GaSb-based Fabry–Pérot laser diodes emitting near 2.3 μm with different ridge etching-depths. The analysis of the device performances allows quantifying the detrimental impact of deep ridge etching. The threshold current density is increased, whereas the external differential quantum efficiency is reduced, due to a reduced internal quantum efficiency and higher optical losses.
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