Abstract
As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations of switching oxide and ohmic electrode (OE) metal that provides a high barrier for the generation of oxygen vacancies [defect formation energy (DFE)]. In this work, we present a sophisticated programming algorithm that aims to maximize the endurance within reasonable measurement time. Using this algorithm, we compare ReRAM devices with four different OE metals and confirm the theoretically predicted trend. Thus, our work provides valuable information for device engineering toward higher endurance.
Highlights
S INCE conventional memory architectures are about to reach physical scaling limitations [1], novel nonvolatile memory (NVM) technologies are intensively studied [2].Among other concepts, redox-based resistive switching memory (ReRAM) gained a lot of attention [3], [4] due to its goodManuscript received October 26, 2020; revised December 11, 2020; accepted December 29, 2020
Frequent voltage adjustments are performed if necessary, and reversible endurance failures can be corrected, and the maximum endurance is determined for each device
The upper panel contains high resistive state (HRS) and low-resistive state (LRS) resistances versus the cycle number, and the lower panel depicts the respective voltages applied by the algorithm
Summary
S INCE conventional memory architectures are about to reach physical scaling limitations [1], novel nonvolatile memory (NVM) technologies are intensively studied [2]. Along with variability [11] and retention [12], the endurance or maximum number of switching cycles until failure is one of the most important reliability aspects. The ideal ReRAM device is not yet found, and several material combinations are under investigation [14]–[17]. In order to do so, VCM ReRAM devices based on ZrO2 are fabricated with four different electrode metals. If the cycling characteristics are more stable, the number of cycles without reading verify is increased, which accelerates the experiment This enabled us to determine the maximum endurance of 50 devices for each material combination within. WIEFELS et al.: IMPACT OF THE OE ON THE ENDURANCE OF OXIDE-BASED RESISTIVE SWITCHING MEMORY.
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