Abstract
AbstractCross‐sectional samples of CuIn1–x Gax Se2 layers grown by a three‐stage process were studied by means of electron backscatter diffraction (EBSD) in completed thin‐film solar cells. The microstructural analysis reveals a dependence of the average grain size on the gallium content x = [Ga]/([Ga] + [In]), with a maximum at x = 0.23. This result is correlated with structural measurements on CuIn1–x Gax Se2 powder samples showing that the ratio of the lattice constants c /a is equal to 2 for about the same x value. The pseudocubic crystal structure at about x = 0.23 may lead to reduced strain in the growing CuIn1–x Gax Se2 layer and therefore larger average grain sizes. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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