Abstract
The stack structure tuning of the ferroelectric tunnel junction (FTJ) devices is reported based on the ferroelectric (FE) layer thickness and interface layer (IL) type/thickness optimization to maximize the FTJ Ion/Ioffratio. A FE thickness scaling shows a low voltage FTJ operation, further challenged by a diminishing trend in the maximum Ion/Ioff ratio due to the thickness dependence of the FE polarization, independent of the IL thickness. The maximum lon/loff ratio varies by tuning the IL type (Si02, Ah03) and thickness (1 nm, 2 nm), indicating a maximum at the Si02 (1 nm) IL condition. A stable endurance of 104 cycles is limited by the high field/cycles induced IL degradation, a stable FTJ at lOy extrapolated retention time is shown. The FTJ synaptic device operation is reported with insight on the stack structure tuning impact on the synaptic LTP /LTD nonlinearity and maximum dynamic range.
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