Abstract
The influence of an external resistance on the performance of VO2 nanogap junctions is analyzed and experimentally characterized. The current-voltage response shows the reversible metal-insulator transition typical of VO2 based devices. When reaching the metallic state, the current through the VO2 junction is abruptly increased, which may result in electrical contact damage. Therefore, an external resistance in series with the VO2 junction is usually employed to limit the maximum current through the device. Our results indicate that the external resistance plays a key role in the switching power consumption showing an optimum value, which depends on the dimensions of the VO2 junction. In such a way, power consumption reductions up to 90% have been demonstrated by selecting the optimum external resistance value.
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