Abstract
The impact of the effective work function (EWF) gate metal on the low-frequency noise behavior of n-type gate-all-around nanowire (NW) FETs has been investigated. A clear reduction of the noise power spectral density has been observed for n-type TiAl-based EWF-metal gate NWFETs, indicating a reduction of the oxide trap density in the high- $\kappa $ dielectric. The difference in the observed trap density profiles for both types of devices can be explained by a beneficial impact of the presence of Al on the trap density in the underlying HfO2. The lower oxide trap density also explains the improvement of the maximum transconductance by $\sim 20$ % in the TiAl-based devices.
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