Abstract
AbstractCation‐based resistive‐switching memories rely on the injection and drift of metal ions in nanoscale thin films. In insulators that do not initially contain mobile cations, such as SiO2, Ta2O5, and so forth, water redox reactions occurring at the counter electrode (CE) were found to be essential in enabling the dissolution of the active electrode and to keep electroneutrality. In this study, we report on the impact of the CE on redox processes prior to resistive switching. Potentiodynamic measurements for various electrode materials revealed that the catalytic activity of the CE towards the water redox process determines the concentration of dissolved ions within the oxide and influences the rate of the total cell reaction. This trend can be used as an indicator for the design of both cation‐ and anion‐conducting oxide‐based resistive‐switching random‐access memories.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
