Abstract
The impact of the phosphorus concentration [P] on the solid-phase epitaxial regrowth rate of preamorphized p-type germanium has been studied by a combination of Rutherford backscattering, secondary ion mass spectrometry, and transmission electron microscopy. It will be shown that for P concentrations in the 1018–5×1019 cm−3 range, the regrowth rate is significantly enhanced compared with undoped germanium, while the opposite holds for [P] above about 4–5×1020 cm−3. This regrowth retardation is shown associated with segregation across the crystalline/amorphous boundary and snow plow of P in excess of the metastable solid solubility in the recrystallized material.
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