Impact of T‐gate electrode on gate capacitance in In0.7Ga0.3As HEMTs

Abstract

AbstractThe intrinsic and parasitic gate capacitance of In0.7Ga0.3As‐channel high electron mobility transistors (HEMTs) are estimated by the gate delay analysis. We prepared 80‐nm InGaAs HEMTs with different geometry of T‐gate electrodes to discuss how the T‐gate electrode affects parasitic gate delay. The results indicate that the both of the top part and stem of the T‐gate electrode has an influence on the cutoff frequency of 80‐nm‐gate HEMTs and in total the parasitic gate delay caused by the T‐gate electrode is more than half of the total gate delay. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)