Impact of Temperature on Neutron Irradiation Failure-in-Time of Silicon and Silicon Carbide Power MOSFETs

Abstract

Accelerated neutron tests on silicon (Si) and silicon carbide (SiC) power MOSFETs at different temperatures and drain bias voltages were performed at the ChipIr facility (Didcot, UK). A super-junction silicon MOSFET and planar SiC MOSFETs with different technologies made by STMicroelectronics were used. Different test methods were employed to investigate the effects of temperature on neutron susceptibility in power MOSFETs. The destructive tests showed that all investigated devices failed via a single-event burnout (SEB) mechanism. Non-destructive tests conducted by using the power MOSFET as a neutron detector allowed measuring the temperature trend of the deposited charge due to neutron interactions. The results of the destructive tests, in the −50 °C–180 °C temperature range, revealed the lack of a common trend concerning the FIT temperature dependence among the investigated SiC power MOSFETs. Moreover, for some test vehicles, the FIT-temperature curves were dependent on the bias condition. The temperature dependence of the FIT values, observed in some SiC devices, is weaker with respect to that measured in the Si MOSFET. The results of the non-destructive tests showed a good correlation between the temperature trends of the deposited charge with those of FIT data, for both Si and SiC devices.