Impact of temperature dependence of resistivity on thermal time constant of direct‐current‐driven Peltier device

Abstract

We studied the impact of the temperature dependence of electrical resistivity on the thermal time constant of our Peltier device with a sandwich structure, which is composed of N‐type Bi2Se0.37Te2.4 and P‐type Bi0.6Sb1.3Te3 bulks. We demonstrated that the current dependence of the thermal time constant is strongly affected by the temperature dependence of the internal electrical resistance of the device, and we also introduced an expression for the relationship between the thermal time constant and four parameters (heat capacity, Seebeck coefficient, thermal conductance, and thermal gradient of internal electrical resistance) for our Peltier device in terms of current.