Abstract
This paper presents an in-depth study of the effects of substrate-surface potential on the RF power performance of laterally diffused MOSFETs (LDMOSFETs) fabricated on high-resistivity silicon-on-insulator (HR-SOI). Substrate-surface inversion and accumulation substantially degrade the RF power performance of these devices by providing an RF shunt between source and drain through the substrate surface. The degradation is most prominent under conditions of low gain, high frequency, and high power compression. The potential of HR-SOI for RF applications can only be realized by preventing the appearance of a continuous conducting path at the substrate surface. Under appropriate conditions of substrate-surface depletion, an RF power LDMOSFET on HR-SOI with a peak PAE of 40% at 7.2 GHz is demonstrated
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.