Abstract
An accurate charge control model to investigate the effect of aluminum composition, strain relaxation, thickness and doping of the AlmGa1−mN barrier layer on the piezoelectric and spontaneous polarization induced 2-DEG sheet charge density, threshold voltage and output characteristics of partially relaxed AlmGa1−mN/GaN HEMTs is proposed. The strain relaxation of the barrier imposes an upper limit on the maximum 2-DEG density achievable in high Al content structures and is critical in determining the performance of lattice mismatched AlmGa1−mN/GaN HEMTs. The model incorporates the effects of field dependent mobility, parasitic source/drain resistance and velocity saturation to evaluate the output characteristics of AlmGa1−mN/GaN HEMTs. Close proximity with published results confirms the validity of the proposed model.
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