Abstract
This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H+ penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.
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